Hall effect, n-Ge, carrier board

Item No. 11802-01 | Type: Equipment & Accessories

Teachers/Professors , Students
Delivery time: available
EUR 608.40
Content 1 piece
EUR 724.00 Incl. VAT

Function and Applications

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

  • Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
  • Dimensions of crystal (mm): 20 x 10 x 1.
  • Spec. resistance: approx. 2.0-2.5 Ohm cm-
  • Max. crystal temperature: 170 °C.
  • Max. probe current: +/- 60 mA.
  • Dimensions of circuit board (mm): 73 x 70 x 3.
  • Weight: 0.03 kg

Name
Filename
Filesize
Filetyp
(de) Bedienungsanleitung
1180100d .pdf
Filesize 0.69 Mb
pdf
(de) Bedienungsanleitung
1180100d .pdf
Filesize 0.69 Mb
pdf
(en) Operating instructions
1180100e .pdf
Filesize 1.28 Mb
pdf
(de) FAQ
faq_11802-01 .pdf
Filesize 0.21 Mb
pdf